FORMATION OF ONE DIMENSIONAL ELECTRON CHANNEL NEAR THE ABRUPT INTERFACE OF TWO QUANTUM-SIZE FILMS WITH DIFFERENT THICKNESS

Authors

  • A. E. Yesayan Chair of Physics of Semiconductors and Microelectronics, YSU, Armenia

DOI:

https://doi.org/10.46991/PYSUA.2003.37.3.057

Keywords:

two-dimensional systems, confinement potential, electron channel, quantum-size semiconductor

Abstract

The confinement potential and charge distribution in the abrupt contact of two two-dimensional systems is considered theoretically. It is shown that a quasi- one dimensional electron channel can be formed near the interface between two quantum-size semiconductor films with different thickness and doping levels. Using the structure with double such “dimensional” heterojunctions a rectangular potential well confining one-dimensional electrons (quantum wire) can be realized.

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Published

2003-10-09

Issue

Section

Physics

How to Cite

Yesayan, A. E. (2003). FORMATION OF ONE DIMENSIONAL ELECTRON CHANNEL NEAR THE ABRUPT INTERFACE OF TWO QUANTUM-SIZE FILMS WITH DIFFERENT THICKNESS. Proceedings of the YSU A: Physical and Mathematical Sciences, 37(3 (202), 57-64. https://doi.org/10.46991/PYSUA.2003.37.3.057