AUGER-TRANSITION OF ELECTRONS TO THE CONDENSON STATE ON THE DISLOCATIONS IN SEMICONDUCTORS

Abstract

Auger transition of a free electron to an edge dislocation is considered in the n-type semiconductor, accompanied by lattice polarization and formation of self-localized state along the dislocation (so-called «condenson»). The capture probability is obtained, as a function of dislocation fill-factor by electrons, energy level depth, and lattice polarization energy.