THERMAL CAPTURE OF ELECTRONS BY DISLOCATION KINKS IN SEMICONDUCTORS

A. S. Vardanyan; R. A. Vardanyan

doi:10.46991/PYSU:A/2008.42.2.041

THERMAL CAPTURE OF ELECTRONS BY DISLOCATION KINKS IN SEMICONDUCTORS

Authors

A. S. Vardanyan Academician Gourgen Sahakyan's Chair of Theoretical Physics, YSU, Armenia
R. A. Vardanyan Academician Gourgen Sahakyan's Chair of Theoretical Physics, YSU, Armenia

DOI:

https://doi.org/10.46991/PYSU:A/2008.42.2.041

Keywords:

process of thermal capture of an electron, smooth kink on dislocation, quantum transition, multi-phonon capture

Abstract

In the light of recombination-enhanced motion of dislocations in semiconductors, we explored the process of thermal capture of an electron by a smooth kink on dislocation. Multi-phonon capture becomes possible due to carrier localisation on the kink. With the use of wave function of localized state we have found the multi-phonon capture cross-section for two limiting temperature cases corresponding to the thermally activated and quantum transition between vibronic terms.

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Published

2023-09-19

How to Cite

Vardanyan, A. S., & Vardanyan, R. A. (2023). THERMAL CAPTURE OF ELECTRONS BY DISLOCATION KINKS IN SEMICONDUCTORS. Proceedings of the YSU A: Physical and Mathematical Sciences, 42(2 (216), 41–48. https://doi.org/10.46991/PYSU:A/2008.42.2.041