PLASMONIC MODE CONFINEMENT IN InAs–SiO$_2$–Si WAVEGUIDE IN TERAHERTZ REGION

H.S. Hakobyan

doi:10.46991/PYSU:A/2011.45.3.058

PLASMONIC MODE CONFINEMENT IN InAs–SiO$_2$–Si WAVEGUIDE IN TERAHERTZ REGION

Authors

H.S. Hakobyan Chair of Microwave Radiophysics and Telecommunication, YSU, Armenia

DOI:

https://doi.org/10.46991/PYSU:A/2011.45.3.058

Keywords:

terahertz, waveguides, surface plasmons

Abstract

The dispersion relation of a novel semiconductor-gap-dielectric waveguide in terahertz range are investigated. It is shown that InAs–SiO₂–Si structure supports strongly confined guided mode with а sizes ~0.0016 λ × 0.02 λ at 1 THz.

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Published

2011-10-17

How to Cite

Hakobyan, H. (2011). PLASMONIC MODE CONFINEMENT IN InAs–SiO$_2$–Si WAVEGUIDE IN TERAHERTZ REGION. Proceedings of the YSU A: Physical and Mathematical Sciences, 45(3 (226), 58–61. https://doi.org/10.46991/PYSU:A/2011.45.3.058