INFLUENCE OF OPTICAL PHONON CONFINEMENT ON TWO-PHONON CAPTURE PROCESSES IN QUANTUM DOTS

A.I. Vartanyan; V.N. Mughnetsyan; K.A. Vardanyan; A.V. Dvurechenskii; A.A. Kirakosyan

doi:10.46991/PSYU:A/2014.48.2.050

INFLUENCE OF OPTICAL PHONON CONFINEMENT ON TWO-PHONON CAPTURE PROCESSES IN QUANTUM DOTS

Authors

A.I. Vartanyan Chair of Solid State Physics, YSU, Armenia
V.N. Mughnetsyan Chair of Solid State Physics, YSU, Armenia
K.A. Vardanyan Chair of Solid State Physics, YSU, Armenia
A.V. Dvurechenskii A.V. Rzhanov Institute of Semiconductor Physics SB RAS, Novosibirsk, Russia
A.A. Kirakosyan Chair of Solid State Physics, YSU, Armenia

DOI:

https://doi.org/10.46991/PSYU:A/2014.48.2.050

Keywords:

capture process, two-phonon processes, confined optical phonons

Abstract

Electron capture process in GaAs/AlAs spherical quantum dot-quantum well structure is studied theoretically. The capture rate in two polar-optical-phononmediated capture processes has been calculated by taking into account the phonon confinement effect. Carrier capture is shown to proceed with rates as high as 1010 s^–1 at temperature T>100 K. A short capture time is also achieved for low carrier density.

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Published

2014-07-10

How to Cite

Vartanyan, A., Mughnetsyan, V., Vardanyan, K., Dvurechenskii, A., & Kirakosyan, A. (2014). INFLUENCE OF OPTICAL PHONON CONFINEMENT ON TWO-PHONON CAPTURE PROCESSES IN QUANTUM DOTS. Proceedings of the YSU A: Physical and Mathematical Sciences, 48(2 (234), 50–53. https://doi.org/10.46991/PSYU:A/2014.48.2.050